2002-01-14 page 1 SDT12S60 SDT12S60 preliminary data silicon carbide schottky diode worlds first 600v schottky diode revolutionary semiconductor material - silicon carbide switching behavior benchmark no reverse recovery no temperature influence on the switching behavior no forward recovery product summary v rrm 600 v q c 30 nc i f 12 a p-to220-2-2. pin 1 pin 2 pin 3 c a marking d12s60 type package ordering code SDT12S60 p-to220-2-2. q67040-s4470 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous forward current, t c =100c i f 12 a rms forward current , f =50 hz i frms 17 surge non repetitive forward current, sine halfwave t c =25c, t p =10ms i fsm 36 repetitive peak forward current t j =150c, t c =100c, d =0.1 i frm 49 non repetitive peak forward current t p =10s, t c =25c i fmax 120 i 2 t value , t c =25c, t p =10ms i 2 d t 6.48 a2s repetitive peak reverse voltage v rrm 600 v surge peak reverse voltage v rsm 600 power dissipation , t c =25c p tot 88.2 w operating and storage temperature t j , t st g -55... +175 c
2002-01-14 page 2 SDT12S60 SDT12S60 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.7 k/w thermal resistance, junction - ambient, leaded r thja - - 62 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics diode forward voltage i f =12a, t j =25c i f =12a, t j =150c v f - - 1.5 1.7 1.7 2.1 v reverse current v r =600v, t j =25c v r =600v, t j =150c i r - - 40 100 400 2000 a electrical characteristics ,at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics total capacitive charge v r =400v, i f =12a, d i f /d t =200a/s, t j =150c q c - 30 - nc switching time v r =400v, i f =12a, d i f /d t =200a/s, t j =150c t rr - n.a. - ns total capacitance v r =1v, t c =25c, f =1mhz v r =300v, t c =25c, f =1mhz v r =600v, t c =25c, f =1mhz c - - - 450 45 43 - - - pf
2002-01-14 page 3 SDT12S60 SDT12S60 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 c 180 t c 0 10 20 30 40 50 60 70 w 90 p tot 2 diode forward current i f = f ( t c ) parameter: t j 175 c 0 20 40 60 80 100 120 140 c 180 t c 0 2 4 6 8 10 12 14 16 18 20 a 24 i f 4 typ. forward power dissipation vs. average forward current p f(av) = f ( i f ) t c =100c, d = t p / t 0 2 4 6 8 10 12 a 16 i f(av) 0 4 8 12 16 20 24 28 32 36 w 44 p f(av) d=0.1 d=0.2 d=0.5 d=1 3 typ. forward characteristic i f = f ( v f ) parameter: t j , t p = 350 s 0 0.5 1 1.5 v 2.5 v f 0 4 8 12 16 a 24 i f 150c 125c 100c 25c -40c
2002-01-14 page 4 SDT12S60 SDT12S60 preliminary data 6 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SDT12S60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 5 typ. reverse current vs. reverse voltage i r = f ( v r ) 100 150 200 250 300 350 400 450 500 v 600 v r -3 10 -2 10 -1 10 0 10 1 10 2 10 a i r 150c 125c 100c 25c 8 typ. c stored energy e c = f ( v r ) 0 100 200 300 400 v 600 v r 0 1 2 3 4 5 6 7 j 9 e c 7 typ. capacitance vs. reverse voltage c = f ( v r ) parameter: t c = 25 c, f = 1 mhz 10 0 10 1 10 2 10 3 v v r 0 50 100 150 200 250 300 350 400 450 500 pf 600 c
2002-01-1 4 page 5 SDT12S60SDT12S60 preliminary data 9 typ. capacitive charge vs. current slop e q c = f ( d i f /d t ) parameter: t j = 150 c 100 200 300 400 500 600 700 80 0 a/s 1000 d i f /d t 0 4 8 12 16 20 24 28 32 nc 40 q c i f *2 i f *0.5 i f
2002-01-14 page 6 SDT12S60 SDT12S60 preliminary data to-220-2-2 symbol [mm] [inch] min max min max a 9.70 10.10 0.3819 0.3976 b 15.30 15.90 0.6024 0.6260 c 0.65 0.85 0.0256 0.0335 d 3.55 3.85 0.1398 0.1516 e 2.60 3.00 0.1024 0.1181 f 9.00 9.40 0.3543 0.3701 g 13.00 14.00 0.5118 0.5512 h 17.20 17.80 0.6772 0.7008 j 4.40 4.80 0.1732 0.1890 k 0.40 0.60 0.0157 0.0236 l m n p 1.10 1.40 0.0433 0.0551 t u v w x 0.00 0.40 0.0000 0.0157 0.26 typ. 6.6 typ. 0.51 typ. 13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ. 1.05 typ. a u v w g m t j f l x p d c k n b h e
2002-01-14 page 7 SDT12S60 SDT12S60 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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